Abstracts:

Here are all the abstracts we currently have for HITEN_2017.

44 Total Abstracts Submitted
  Records 1 to 10 of 44

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Field Abstract Abstract Text
Date Submitted: 7/1/2016 11:38:37 AM  This paper will describe the development and testing of a new ARM(C) Cortex(C)-M based microcontroller for high temperature electronic systems. The trade-offs in the selection of each on-chip peripheral will be discussed with respect to their requirement in the application. Particular detail will be afforded to the underlying high-temperature implementation technology that allows reliable operation at extreme temperatures. High temperature and electrical overstresses can cause latch-up in CMOS devices that will interfere with normal device operation or destroy the device. For reliable operation in the downhole drilling environment it was necessary to immunize this device against latch-up using an innovation processing technique. In addition, many fault-tolerant and fault-avoidance hardware sub-systems have been developed and incorporated into the architecture to ensure predictable and reliable operation. Details on the qualification and testing of the product to ensure that it meets the challenging environment will also be discussed. This includes electrical testing and temperature cycling testing to ensure that the different package options for the silicon device are mechanically sound in a high temperature environment that exposes the silicon and packaging materials to thermal cycling. The ecosystem for the microcontroller will also be discussed � hardware and software development tools are required to optimize the use of the device in extreme temperature embedded systems. An ecosystem of components is also required to operate with the microcontroller in the high temperature harsh environment. The components that were selected for use on the high temperature test boards will also be discussed.  
Abstract No: 2017hiten001 
Event: HITEN_2017 
Paper Title: Creation of an ARM(C) Cortex(C)-M based microcontroller for high temperature embedded systems  
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: microcontroller 
microelectronics
embedded
Author: Ross Bannatyne 
 
Author's Company: VORAGO Technologies 
Job Title: Director 
Address: 1501 S. Mopac Expressway, Suite 350 
City: Austin 
State: Texas 
Zip: 78734 
Country: USA 
Phone: 5125502954 
Fax:  
Email: rbannatyne@voragotech.com 
Associated Author(s):  
Paper Significance: Last year in Albuquerque I presented a paper on the development on an M0 based micro controller. This paper is a follow up that details how all the high temp testing and qualification data was developed and applied to the creation of a next generation M4-based micro controller.  
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 12/22/2016 11:42:51 AM  High power IGBT modules are crucial components in switching power electronic applications, such as renewable energy, traction, electrical vehicles. The IGBT module packages usually provide electromagnetic (EM)/chemical protection, mechanical support, heat dissipation, electrical connection for electrical components and interconnections [1]. 3.3kV/1500A IGBT module, with 190mmX140mm footprint, is one type of standard packages that have been vastly utilised in traction, industry applications. There are different failure modes due to high power, high voltage, and high current ratings of the module. One of most serious failures is the module explosion. The high power module explosion can cause direct damages and huge influences to surrounding systems or even cause safety problems depending on its application scenario. New 3.3kV/1500A IGBT module with improved explosion performance has been designed and investigated via 3D simulation and experiment jointly [2]. This paper will focus on the main reasons for explosion and how to reduce the explosion damages once the explosion is unavoidable. During the switching operations, IGBT modules can normally afford very high short-circuited current for ~10µs or longer period as different application requirements. Control driver circuits are utilised to act once short-circuit happens. Extreme high short-circuited current can cause module failure or even explosion. That is one of key factors that can cause power module explosion. The explosion effect normally relates to encapsulating materials, such as silicone gel, plastic frame, or epoxy seal used for the module. The mechanism is rather complicated that once module explosion is unavoidable, customers would like to have minimum effects on the surrounding devices.We have utilised both computational simulation and experimental explosion test to investigate the mechanism of explosion and reduce explosion influences for new designed 190X140 footprint IGBT module [2]. 3D EM, EM-Circuitry, Electrical-Thermal-Mechanical simulations have been used to investigate the module performance in different aspects, i.e. (a) EM simulation to calculate busbar Lorentz force, the Lorentz force can cause deformation of whole module during explosion if high short-circuit current going through busbars; (b) electrical-circuitry simulation to study the current imbalance at switching-on stage due to IGBT parallel interconnections. This study can show the possible weakest point even at explosion stage; (c) Electro-thermal simulation to show the thermal distribution during operation and the corresponding thermal-mechanical effect and tendency onto electrical performance. Explosion test platform has been setup internally to verify explosion capability for the new 190X140 3.3kV/1500A module. Extreme high current rating between 250kA and 300kA as short pulse had been applied to IGBT module and generated the explosion failures for different modules as parallel comparison. The explosion test results have shown that the new designed modules have very limited influences on the surrounding system. The exploded module analysis had verified the key simulation conclusions as mentioned in the previous paragraph. More detailed explosion mechanism analysis and explosion results can be introduced during the conference.  
Abstract No: 2017hiten002 
Event: HITEN_2017 
Paper Title: Explosion Mechanism Investigation of High Power IGBT Module 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: IGBT 
Explosion
High Power
Author: Daohui LI 
 
Author's Company: Dynex Semiconductor Ltd 
Job Title: Senior Principal Engineer 
Address: Power Semiconductor R&D Center, Dynex Semiconductor Ltd 
City: Lincoln  
State: Lincoln 
Zip: LN6 8BD 
Country: UK 
Phone: 01522502979 
Fax:  
Email: daohui.li@dynexsemi.com 
Associated Author(s): Xiaoping Dai, Fang Qi, Wei Zhou, Matthew Packwood, Helong Li, Lee Coulbeck, Steve Jones 
Paper Significance: Original paper to investigate one of most severe failure modes for high power IGBT module 
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 1/17/2017 11:08:28 AM  The power densities of certain semiconductor devices, such as SiC, GaN, and the like, are increasing with requirements for higher continuous use temperatures with high thermal properties. For example, one application is for a continuous use temperature of 300C with SiC devices with a die attach process at about 370C. This paper describes development of an Ag/glass die attach paste, which demonstrates high reliability, for high temperature continuous use. Organic adhesives, such as Ag epoxies, thermoplastics, etc. are not applicable because of high temperature degradation at 300C. Existing Ag/glass adhesives do not meet the requirements of high continuous use temperature, with lower die attach temperature. For example, DM3030 Ag/glass employs a vitreous glass which was designed for low temperature processing but does not have the 300C required adhesion properties because of the low Tg of the glass. DM3355 contains a crystallizing glass designed for low temperature remelt that results in a crystallized structure upon cooling with a more robust structure (with higher reliability and good temp-cycle resistance). However, the crystalline remelt temperature is too low to result in high 300C adhesion; once the crystalline phase remelts, adhesion decreases significantly. Described in this paper is the development of a unique crystallizing glass that has a crystalline remelt temperature of greater than 300C and less than about 370C. During the die attach process, the crystallized glass melts at about 350C which wets the surfaces of the die and substrate. During the cool down of the die attach process, the glass crystallizes creating a robust structure with a remelt temperature greater than 300C. Therefore, die adhesion remains high for a 300C continuous use temperature, which is a requirement for this application. Another key requirement of a die attach material for use with SiC devices is power dissipation; i.e. heat dissipation. Very low interfacial thermal resistance has been demonstrated in this paper. Also shown is the impact of key oxide additions which result in a significant reduction of thermal resistance consistently to as low as 0.01 C*cm2/watt, as measured by the laser flash method. An inherent advantage of glass as the adhesive agent is its ability to wet oxide or metal surfaces. Thus, this allows the option to use bare die and substrates in lieu of metalized surfaces in certain applications, with the potential for significant cost savings. This new technology replaces the higher cost solder alloys and provides a high reliability option that meets the requirements for SiC device packaging 
Abstract No: 2017hiten003 
Event: HITEN_2017 
Paper Title: Development of a Ag/glass die attach paste for high power and high use temperature applications 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: 300C Operating Temperature 
Ag/Glass
Thermal Adhesive
Author: Maciej Patelka 
 
Author's Company: NAMICS 
Job Title: Development Engineer 
Address: 19 Central Street 
City: Byfield 
State: MA 
Zip: 01922 
Country: USA 
Phone: 978-499-0900 
Fax: 978-499-8484 
Email: m-patelka@diemat.com 
Associated Author(s): Maciej Patelka, Noriyuki Sakai 
Paper Significance: Thermally Conductive Adhesive for 300C Continuous Operating Temperature  
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 1/17/2017 12:43:27 PM  High power semiconductor applications require a die attach material with high thermal conductivity to efficiently release the heat generated from these devices. Current die attach solutions such as eutectic solders and high thermal conductive silver epoxies and sintered silver adhesives have been industry standards, however may fall short in performance for high temperature or high stress applications. This presentation will focus on development of a reinforced, sintered silver die attach solution for high power semiconductor applications with focus on a pressure-less, low temperature sintering technology that offers high reliability for high temperature (250C) applications. The electronic, optoelectronic, and semiconductor industries have the need for high performance adhesives, in particular, high power devices require low-stress, high thermal conductivity, thermally stable, and moisture resistant adhesives for the manufacture of high reliability devices. This paper introduces a new reinforced sintered silver adhesive based on the resin-free Conductive Fusion Technology. The high performance adhesive offers a robust solution for high temperature, high reliability applications. Conductive Fusion Technology consists of a high thermal conductivity silver component blended with a non-conductive, low-modulus powder component. The non-conductive powder component comprises an organically modified inorganic material that exhibits excellent thermal stability at temperatures exceeding 250C. Properties of the sintered silver adhesive, such as storage modulus, can be modified by varying the content of the non-conductive component.  
Abstract No: 2017hiten004 
Event: HITEN_2017 
Paper Title: Development of Conductive Fusion Technology 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: Sintered Silver 
Low Modulus
Thermals
Author: Maciej Patelka 
 
Author's Company: NAMICS 
Job Title: Development Engineer 
Address: 19 Central Street 
City: Byfield 
State: MA 
Zip: 01922 
Country: USA 
Phone: 978-499-0900 
Fax:  
Email: m-patelka@diemat.com 
Associated Author(s): Maciej Patelka, Nick Krasco, Sho Ikeda, Toshiyuki Sato 
Paper Significance: Resin free, Thermally Conductive Sintered Silver technology reinforced with low-modulus component  
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 1/19/2017 12:50:16 PM  There is a long established market for high temperature multi-layer ceramic capacitors (MLCC) that operate at 150C and higher in down-hole oil & gas exploration, military and aerospace applications. In order to maximize the capacitance density and achieve a high degree of mechanical robustness, stacks and leaded form factors have been used with High Melting Point (HMP) Pb-containing solders as the preferred interconnects. However, Pb-containing solders are limited to temperatures below 300C and are banned from many commercial and automotive applications with further legislation limiting their use planned in the future. Common Pb-free solders such as SAC 305 or SnSb alloys are in widespread use but their performance at prolonged exposures at 200C is limited. Exposures to high reflow temperatures during assembly, especially successive reflow operations, can also compromise interconnect integrity. Higher temperature gold-containing solders are widely available but these are cost prohibitive and so are not viable for emerging high temperature electronics including higher volume, price sensitive Automotive and Power markets. The development of more energy efficient power converters and inverters based on wide band gap semiconductors is driving the adoption of higher temperature electronics in these markets since these operate at higher junction temperatures than traditional silicon. This has led to the development of non-solder interconnects based on sintered silver, nano-metal sintering and transient liquid phase sintering (TLPS) technologies capable of higher temperature performance than common solder based interconnects. The availability of discrete components, such as capacitors, that can operate under these conditions is a key barrier to the development and adoption of high temperature electronics. In this paper the key property differences between solders and TLPS interconnect technologies are compared in detail for MLCC interconnects. The development of a new range of nickel Base Metal Electrode C0G MLCC stacks rated for 200C is described and performance compared to traditional Precious Metal Electrode (PME) stacks. Thermal cycling performance to 200C of BME X7R stacks made with 10Sn/88Pb/2Ag solders are compared to similar stacks made with TLPS interconnects of Cu-Sn and In-Ag. The development of leadless stacks, a new bulk capacitance form factor enabled by TLPS technology, is described and their properties compared to traditional stacks. 
Abstract No: 2017hiten005 
Event: HITEN_2017 
Paper Title: A Comparison Between Solders & Transient Liquid Phase Sintered Interconnects in High Temperature Multi-Layer Ceramic Capacitors 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: High Temperature Interconnects 
Multi-Layer Ceramic Capacitors
Transient Liquid Phase Sintering
Author: John Bultitude 
 
Author's Company: KEMET Electronics Corporation 
Job Title: Vice President, Technical Fellow 
Address: 2835 Kemet Wat 
City: Simponville 
State: South Carolina 
Zip: 29681 
Country: United States 
Phone: 8649636450 
Fax: 8649636492 
Email: johnbultitude@kemet.com 
Associated Author(s): John McConnell, Lonnie Jones, Galen Miller, Jim Magee, Allen Templeton, Abhijit Gurav and Reggie Phillips 
Paper Significance: New detailed property and performance differences are compared for solders and transient liquid phase interconnects in high temperature ceramic capacitors. New leadless stacked capacitors are compared to current leaded packages. 
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: no 

Field Abstract Abstract Text
Date Submitted: 1/23/2017 11:58:54 AM  ABSTRACT: Reducing Die-Attach Voids in Gold-Based Solder Preforms Bernard Leavitt Introduction The need for high-temperature solders is growing as RF and power semiconductor devices continue to get smaller and power density and power ratings increase. AuSn20 solder has been the workhorse for many years for small high-temperature, high-reliability die-attach applications. Unfortunately, as junction temperatures (Tj) increase, gold-tin eutectic is beginning to reach its limit. This paper will discuss how voids can be minimized to improve heat transfer and reliability with the usage of higher melting, gold-based alloy preforms.  
Abstract No: 2017hiten006 
Event: HITEN_2017 
Paper Title: Reducing Die-Attach Voids in Gold-Based Solder Preforms 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: Die-attach 
high-reliability
void-reduction
Author: Bernard Leavitt Jr 
 
Author's Company: Indium Corporation of America 
Job Title: Product Specialist 
Address: 34 robinson Rd 
City: Clinton 
State: ny 
Zip: 13323 
Country: USA 
Phone: 315 534 8123 
Fax: 315 853 1000 
Email: bleavitt@indium.com 
Associated Author(s): Andy mackie 
Paper Significance: The paper is based on testing we did for a new void reduction 88Au12Ge preform for high temperature die-attach applications. 
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 1/25/2017 9:45:48 PM  Modern vehicles are becoming more electronically controlled for low cost design, environmental regulation, and also safety issues. This 'Vetronics' trend brings great demand of thermally robust design and technology for Electronic Control Unit (ECU). Generally, ECUs placed near the engine room (such as ABS ECU) provide Over Heat Protection (OHP) function to ensure the normal operation without damage in 125C ambient temperature condition. However, OHP function requires additional ADC pins of MCU and peripheral circuits to monitor temperature, and consequentially increases cost and size of ECU. These kinds of disadvantages can be avoided by calculating the actuator power dissipation without temperature monitoring, but the accuracy cannot be guaranteed. In order to overcome the disadvantages of software based thermal management, this paper suggests purely hardware based thermal management method. The key point of this hardware based method is using the temperature dependent characteristics of passive components, which sensitively affect the operation of thermally critical circuit, especially the power MOSFET of actuators. In case of power MOSFET, conduction loss and switching loss are generating heat. The conduction loss can be reduced by choosing MOSFET with low drain-source on resistance, Rds(on). For switching loss, rising time and falling time is core factor, and rising/falling time can be easily reduced by setting gate resistor in low value. However it will cause bad EMI performance, therefore excellent trade-off should be done between thermal and EMI performance. The core idea of this paper is dividing power switching mode to 'EMI friendly' mode in low temperature condition, and 'thermal friendly' mode in high temperature condition. These two modes will be adaptively switched by the temperature change. To verify the performance of hardware based thermal management method, certain simulation will be proceeded, and high temperature test result of ABS ECU will be provided. Finally the effectiveness of this method will be analyzed through the calculation of power MOSFET junction temperature and by comparing the value of existing circuit and thermally adaptive circuit.  
Abstract No: 2017hiten007 
Event: HITEN_2017 
Paper Title: Hardware Based Thermally Adaptive Control of ABS ECU 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: thermal management 
ABS ECU
power switching component
Author: Hyun-Duk Park 
 
Author's Company: Mando-Hella Electronics Corp. 
Job Title: Research Engineer 
Address: 224, Harmony-ro, Yeonsu-gu 
City: Incheon 
State:
Zip: 22011 
Country: Republic of Korea 
Phone: (82)10-8731-3398 
Fax:  
Email: hdpark@mandohella.com 
Associated Author(s):  
Paper Significance: Dividing power MOSFET's operation to 'EMI friendly' mode in low temperature condition, and 'thermal friendly' mode in high temperature condition. These two modes will be adaptively switched by purely hardware based thermal management method.(without support of software) 
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: no 

Field Abstract Abstract Text
Date Submitted: 1/27/2017 10:32:32 AM  As advanced natural gas power generation systems evolve, the thrust for increased efficiencies and reduced emissions results in increasingly harsh conditions inside the turbine environment. These high temperatures, pressures, and corrosive atmospheres result in accelerated rates of degradation, leading to failure of turbine materials and components. Wolfspeed, A Cree Company, Siemens Energy and Siemens Corporate Technology, in collaboration with the DoEs National Energy Technology Laboratory (NETL), are developing a reliable and long-term monitoring capability in the turbine hot gas path in the form of novel ceramic based thermocouples and wide band gap instrumentation electronics that will contribute to the overall reliability of gas turbines. When equipped with better monitoring and controls, power plants can operate with increased fuel-burning efficiency, improved process dynamics and gas concentrations, and increased overall longevity of the power plant components. This will result in increased turbine availability and a reduction in outages and maintenance costs. The technology being developed in this program is based upon advanced techniques and innovations in nearly every aspect of high temperature electronics, including materials, subcomponents, semiconductors, electronic packaging, and system integration. The environment in which this wireless system must operate has continuous g-loads on the order of 16,000g, and temperatures exceeding 400 C. This paper will specifically discuss the background and motivation for the high temperature instrumentation system, and will explain the high-level electrical system, the construction of the instrumentation package, the techniques utilized for integration onto rotating components, as well as the wireless power and data transmission systems. In addition to the electrical and mechanical design, this paper will also discuss results from laboratory bench testing as well as heated spin rig testing. Finally, this paper will highlight the future direction of the instrumentation system evolution, with a final objective of insertion into Siemens natural gas turbine power plants.  
Abstract No: 2017hiten008 
Event: HITEN_2017 
Paper Title: An Advanced Extreme Environment Wireless Telemetry System for Turbine Blade Instrumentation 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: Wireless 
Telemetry
SiC
Author: John R. Fraley 
 
Author's Company: Wolfspeed, A Cree Company 
Job Title: Development Engineering Manager 
Address: 535 W Research Center Blvd 
City: Fayetteville 
State: AR 
Zip: 72701 
Country: United States 
Phone: 4794352530 
Fax: 4794352530 
Email: john.fraley@wolfspeed.com 
Associated Author(s): Joshua McConkey, Anand Kulkarni, Brett Sparkman, Stephen Minden 
Paper Significance: This abstract discusses a full telemetry system functional in a 400 C, 16,000 g turbine environment. 
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 1/30/2017 12:22:40 AM  In this paper, we evaluate the ageing (1000~h) behaviour of two printed circuit board (PCB) materials: A FR4 material (Panasonic R1755V) and a polyimide material (Arlon 85N). Two test conditions are used:  
Abstract No: 2017hiten009 
Event: HITEN_2017 
Paper Title: Evaluation of printed-circuit boards materials for high temperature operation  
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: printed circuit board 
degradation
reliability
Author: Cyril BUTTAY 
 
Author's Company: Laboratoire AMPERE, CNRS 
Job Title:  
Address: 21, Avenue Capelle 
City: Villeurbanne 
State: -- 
Zip: 69621 
Country: France 
Phone: +33 4 72 43 79 63 
Fax:  
Email: cyril.buttay@insa-lyon.fr 
Associated Author(s): Oriol Avino-Salvado, Wissam Sabbah, Herv Morel, Pascal Bevilacqua  
Paper Significance: This paper presents the high-temperature behaviour of two PCB materials in two atmospheres (air and nitrogen). All details are given, including the actual reference of the PCB materials 
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

Field Abstract Abstract Text
Date Submitted: 1/30/2017 8:54:59 AM  Abstract: The surface oxidation of internal pore surfaces of nano-scale sintered silver has increased stability for high temperature applications. Operating temperatures of up to 400 C have resulted in no or minimal changes in microstructure. By contrast, it is known that the microstructure of untreated pressure-less sintered silver continuously evolves at temperatures above 200 C. Grain and pore growth occur in this temperature range resulting in coarsening of the microstructure and increased susceptibility to fatigue. Oxidation of the internal pore surfaces, by exposure to steam for example, has the effect of freezing the microstructure when the contact metallization is also silver or chemically inert. Oxidation prevents grain boundary movements by arresting the fast migration of atoms along the internal pore surfaces. Samples exhibited no change in microstructure either through continuous observation through glass, or after cross sectioning. The tested specimens under high temperature storage resisted grain growth for more than 600 h at 300 C. The only detectable changes in microstructure occurred in a sparse number of isolated grains (1 in 7000 grains), presumably due to non-penetration of oxidising treatment into these closed pore spaces. It is hypothesized that even these can be prevented by minor changes to the sintering paste to slightly increase initial porosity. The oxidising treatment can be performed via many different routes. For example, exposure to steam, or even by dipping in water for 10 min followed by immediate high temperature exposure.  
Abstract No: 2017hiten010 
Event: HITEN_2017 
Paper Title: Increased thermal Stability of Sintered Silver Die Attach from 200 C to 400 C 
Recommended Session: - ()
Topical Area:
Invited by: Not Invited
Keywords: Electronic Packaging,,Aging 
Sintering,Bonding
Die Attach
Author: khalid khtatba 
 
Author's Company: King's college university 
Job Title: PhD student  
Address: King's college university , Physics Department, strand building  
City: london 
State: Londonderry 
Zip: wc2r 2ls 
Country: United Kingdom 
Phone: 7588804321 
Fax: 7588804321 
Email: khalid.khtatba@kcl.ac.uk 
Associated Author(s):  
Paper Significance:  
Student?: NO 
Paper or Poster?:
Authorize to refer paper to chapter if rejected during evaluation: yes 

 

 

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