Here is the abstract you requested from the CICMT_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Nano-Particles for Low Temperature Processing of Interconnects|
|Keywords: nano-particles, low temperature, direct-printing|
|Recent advancements in nano-particles will enable printed electronics to achieve feature sizes and lower temperature processing that has not been previously possible. Limited processing techniques dictate the size and limitations for RF Multi Chip Modules, but advanced materials with low temperature processing and quality electrical characteristics will allow direct interconnecting with active components on ceramic substrates and avoiding solder and wire bonding. Smaller bonds pads on the active device, connecting to larger capacitors and doing so on a single substrate. Historically, materials have been the primary limitation of printed feature sizes due to the ratio between particle size and exit orifice. With nano-particle sizes between 5-30nm, additive processes will no longer be limited by material formulations, but rather by the processes and equipment. For RF lines there is a minimum thickness that is used for line height or the functionality will deteriorate; typically 7 microns or more. nScrypt will present a volumetric control study using materials with viscosities above 200cps for thicker lines, while demonstrating control on the order of 75 picoliters and less.|
|Dr. Dongjiang Xu, Research & Development Engineer