Here is the abstract you requested from the CICMT_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Nanoscale SiC Sintered Structures for Advanced Microsystems and Power Electronics Packaging|
|Keywords: silicon carbide, sintering, nanoscale|
|Enhanced performance expectations from materials used in high temperature microreactors and 3-D microelectronic packaging have created opportunities for exploring nanoscale materials with improved thermal and corrosion resistant properties at high temperatures. Numerous routes have been developed recently for the synthesis of a broad range of ceramic and metal nanoparticles. However, applications for these new materials have lagged behind owing to a limited understanding of processing methods that can convert these materials to multiscale architectures with useful properties. This paper presents the evolution of density, grain growth and properties during the sintering of nanoscale silicon carbide using plasma pressure compaction. The time, temperature and pressure inter-relationships on densification, microstructure and properties will be explored using the integral work of sintering concepts based on the master sintering curve analysis. The combined experimental and modeling approaches will help in reducing the trial-and-error that is currently required to determine the optimum sintering cycles and properties in nanostructured materials.|
|Manish Bothara, Ph.D. Student
Oregon State University