Here is the abstract you requested from the CICMT_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|New Lanthanum Borates-Based Low Temperature Dielectrics|
|Keywords: LTCC, dielectrics, borates|
|New microwave dielectric materials based on lanthanum borates (La2O3-B2O3) systems modified with divalent oxides (CaO, MgO and ZnO) and rare earth oxides (Nd2O3 and Sm2O3) have been investigated as new candidates applicable for the low temperature co-fireable system. The low temperature microcircuit technology provides practical and viable merits primarily in that inexpensive low-melting conductor (e.g., Ag and Cu) can be utilized with the subsequent increment of integration density. Several different batches of glass consisting of 60 mol% B2O3, 20 mol% rare earth oxide (i.e., La2O3, Nd2O3 or Sm2O3) and 20 mol% divalent oxide (i.e., CaO, MgO, or ZnO) were successfully prepared by quenching melts from 1400oC. A fixed amount of 40 wt% Al2O3 filler was then added to form rigid samples through subsequent firing at 850oC for 30 minute in ambient atmosphere. As a specific example of optimized dielectric characteristics, a high-quality factor of ~1090 and a dielectric constant of 8.32 at 17.04 GHz was obtained for the Zn and La-based material system. Understanding of developed crystalline phases during the firing process and their correlations to consequential microwave dielectric properties in the newly-developed material systems are the main purpose of this presentation.|
|Yong Soo Cho, Associate Professor