Here is the abstract you requested from the DPC_2007_FlipChip technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Thin Film Substrate Technology and FC Interconnection for|
|Keywords: High Frequency (110 GHz), Flip Chip, Thin Film Multilayer|
|High speed interconnections for the next generation internet or high frequency measurement systems need ultra fast photodetectors and appropriate high frequency transmission lines. A highly critical aspect for packaging these devices is the interconnection and the appropriate substrate technology. Thin Film substrates using BCB are a suitable approach due to the high accurate manufacturing technology and the possibility to use low k dielectrics. FC assembly is the best interconnection technology for this very high frequency application, and it is already proven in production. Ultra-fast InP-photodetectors (100 GHz) with CPW signal pads (GSG) had to be connected to a 1 mm RF plug via a micro-stripline (MS). Flip chip bumps on InP and interconnection schemes for CPW to MS transitions were investigated. The electrical performance of these structures has been simulated and will be discussed with respect to the electrical tests done on the samples. The process compatibility of the chosen materials was verified separately and the properties adapted, if necessary. Reliability tests have been performed on test samples and will be discussed also in the paper with respect to substrate technology and to the FC assembly.|
|Michael Toepper, Project Leader