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Development of Uniformity Control Process in Si Deep Etching by NLD Plasma
Keywords: Si DRIE, Thru silicon via, NLD etcher
A drawback of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to the resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment.
Yasuhiro Morikawa, Process Engineer; Chief
Shizuoka 410-1231,

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