Here is the abstract you requested from the DPC_2007_Mems technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Development of Uniformity Control Process in Si Deep Etching by NLD Plasma|
|Keywords: Si DRIE, Thru silicon via, NLD etcher|
|A drawback of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to the resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment.|
|Yasuhiro Morikawa, Process Engineer; Chief