Here is the abstract you requested from the ExCold_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|SiGe Diodes for Cryogenic Power Electronics|
|Keywords: SiGe, power, diodes|
|Use of cryogenic power management and distribution systems on ships and aerospace vehicles is expected to provide important benefits including reduced size and weight, improved efficiency, greater versatility, and decreased maintenance. Cryogenic power technology also has potential applications in commercial and industrial systems that incorporate cryogenics or superconductivity. Our overall objective is to develop SiGe semiconductor devices (diodes and transistors) for cryogenic power applications and to demonstrate their advantages. We will report on our development of SiGe power diodes. The general design goals for these diodes are forward current greater than 10 A, reverse breakdown voltage greater than 1000 V, operation down to 55 K or lower, and forward voltage and reverse recovery better than that of equivalent Si diodes. We will report on our development of SiGe diodes and their characteristics and progress toward the design goals. We will also present results from basic boost power-converter circuits (approximately 25-100 W and 50-500 V output) using SiGe diodes, which operate over an ambient temperature range from room temperature to deep cryogenic temperatures.|
|Rufus R. Ward, Vice President Engineering
GPD Optoelectronics Corp.