Here is the abstract you requested from the ExCold_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Characterization of SOI Industrial Circuits from -195°C to 300°C|
|Keywords: SOI Silicon-on-insulator, Extreme temperature, Voltage regulator and reference|
|In collaboration with Nasa Glenn Research Center, CISSOID’s components have been measured on an extreme temperature range from -195°C to +300°C. Circuits have been developed to sustain high temperature (up to 300°C with degraded performances) on a 1µ SOI (Silicon-On-Insulator) Process. The measured circuits are a Voltage regulator (3.3V), a voltage reference (2.5V) and a 555 timer. Circuits have been tested by GRC from -195°C to 100°C and by CISSOID from 25°C to 300°C. All circuits are operational in this very large temperature range and can be switched off and on in all conditions. The voltage reference shows a global precision of 5% on the complete temperature range. The voltage regulator presents a global precision of 6%. Measurements shows that -200°C and +300°C are the limit where these SOI circuits can work normally, below and above these temperatures, all the performances degrade exponentially. During our presentation, we will present shortly the 3 circuits and the SOI technology used to develop these industrial circuits. Some words will be given on packaging. Then measurements results will be given for very low and very high temperature. Some reliability data are available at high temperature and will be show. As a conclusion, this paper demonstrates that SOI technology is a tremendous process for space application, high temperature were recognized since a long time and now we demonstrate that these circuits can also work at extreme cold temperature. Some works will be done next year to characterize these components under radiation.|
|Laurent Demeûs, CEO