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Characterization of SOI Industrial Circuits from -195C to 300C
Keywords: SOI Silicon-on-insulator, Extreme temperature, Voltage regulator and reference
In collaboration with Nasa Glenn Research Center, CISSOIDs components have been measured on an extreme temperature range from -195C to +300C. Circuits have been developed to sustain high temperature (up to 300C with degraded performances) on a 1 SOI (Silicon-On-Insulator) Process. The measured circuits are a Voltage regulator (3.3V), a voltage reference (2.5V) and a 555 timer. Circuits have been tested by GRC from -195C to 100C and by CISSOID from 25C to 300C. All circuits are operational in this very large temperature range and can be switched off and on in all conditions. The voltage reference shows a global precision of 5% on the complete temperature range. The voltage regulator presents a global precision of 6%. Measurements shows that -200C and +300C are the limit where these SOI circuits can work normally, below and above these temperatures, all the performances degrade exponentially. During our presentation, we will present shortly the 3 circuits and the SOI technology used to develop these industrial circuits. Some words will be given on packaging. Then measurements results will be given for very low and very high temperature. Some reliability data are available at high temperature and will be show. As a conclusion, this paper demonstrates that SOI technology is a tremendous process for space application, high temperature were recognized since a long time and now we demonstrate that these circuits can also work at extreme cold temperature. Some works will be done next year to characterize these components under radiation.
Laurent Demes, CEO
Louvain-la-Neuve 1348,

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