Here is the abstract you requested from the IMAPS_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|High Heat Dissipation Package Structure of Nitride-based Semiconductor Green Light Emitting Diodes|
|Keywords: heat dissipation, green light emitting diodes, package|
|Heat dissipation problem has become increasingly important when comes to device applications using high power light emitting diodes (LEDs). To thermally manage the devices in a most effective fashion, we report a novel packaging technology in which a copper electroplating process is directly applied the green LED chip. With the copper-encapsulated layer, the injection current subsequently administered to the LED chip can be increased easily from a conventional 350 mA to more than 1050 mA at room temperature. This process can be well adapted to InGaN-based green LED when its working current can be driven all the way up to 1250mA. At 350 mA, the relative luminous intensity of the specially packaged green LEDs clearly demonstrate a corresponding enhancement of 69% when compared to conventionally packaged LEDs. Furthermore, as the injection current of the LED chips increases to 900mA, the respective improvement in relative luminous intensity of the green LED chip becomes 83% when compared to the conventional packaged device.|
|Kuan-Chun Chen, Student
Institute of Microelectronics,Department of Electrical Engineering, National Cheng Kung University