Micross

Abstract Preview

Here is the abstract you requested from the IMAPS_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Constructing a Complex Radiation Source from Simple Point Sources
Keywords: radiative points sources, near fields, constructing sources
This paper is a follow on to the previous paper, Electric and Magnetic Scans of the Near Field of a PC Platform System Clock, and moves on from the measurements to derive a set of analytical operators that take the discrete measurement matrix and transform it to a measure of local density across the die. Through the use of these operators, individual point sources of radiated emissions can be identified within the silicon and designers can then work to make appropriate changes. A set of before and after measurements will be shown which indicate a 20 dB improvement in the radiated emissions profile through use of this analysis. The second part of the paper will then construct complex sources analytically from simple point sources and show correlation between this approach and measured data from existing silicon. This approach allows silicon designers to do functional floorplan design with EMI in mind in the early design process.
Kevin Slattery, Engineering Research Manager
Intel
Hillsboro, OR
USA


CORPORATE PREMIER MEMBERS
  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • NGK NTK
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems