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Thick Film Sensor for Temperature Balanced Process Monitoring
Keywords: temperature sensor, thick film technology, temperature balanced process monitoring
This paper deals with new thick film sensor based on a powerful temperature difference measuring relation method using the high resistance ratio-metric sensor, which is improving the accuracy of the temperature measurement. This solution minimizes usual problems as dependence of sensor’s sensitivity from other factors as power supply instability, ambient temperature, humidity and pressure, effects of self-heating, aging, etc. The modified low resistance sensor heater and relatively simple evaluation circuit were developed and tested for the monitoring of balanced temperature through process based on surroundings energy activity in this system. The process chamber is heated to constant temperature by two asymmetric low resistance dividers in anti-parallel circuit that is connected to output of power linear operational amplifier. The sensor heater contains of four thick film resistors, which are realized on bottom side of substrate. Two of them are temperature-dependent (Pt) and other two are temperature non-dependent (AgPd) resistors. After initial temperature balance, establishing the actual time progress of output and input voltage ratio is characteristic parameter for observation and monitoring of process energy activity in accordance to surroundings status changes. The sensor is realized as thick film hybrid system on ceramic alumina substrate and offers a very chip but precise alternative to micro–calorimetric techniques used mostly for temperature regulation. Common ESL thick film pastes were applied to realize this sensor in usual thick film process in air atmosphere using BTU thick film furnace. There were designed different topologies and temperature models (using ANSYS) to achieve optimized configuration of complete sensor system.
Ivan Szendiuch, Assoc. Professor
Brno University of Technology
Brno 60 200, Udolni 53,
Czech Republic

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