Here is the abstract you requested from the IMAPS_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Investigation of Silicone-Based Encapsulants for a High-Temperature Power Module|
|Keywords: encapsulants, high temperature power module, reliability|
|Emerging Silicon Carbide (SiC) semiconductors enable power electronic systems to operate at temperatures of at least 200°C. Developing a high temperature capable encapsulant is one of the critical challenges for high temperature power semiconductor modules. Especially since they must withstand high temperature, environmental attack, and partial discharge due to internal high voltage. Most silicone-based encapsulant materials have a temperature limitation of 150°C. Higher temperatures can cause these encapsulants to either chemically degrade or exert excessive mechanical stress on internal components. A limited number of encapsulant gels have been marketed for operation above 200°C. These high temperature encapsulants are evaluated for electrical and thermal reliability under high temperatures.|
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