Here is the abstract you requested from the IMAPS_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Packaging Reliability of Indium Attach in SiGe Electronic Module for Space Exploration Applications|
|Keywords: Packaging Reliability, Indium, Extreme Cold Environment|
|The future space exploration missions require the development of electronic systems, which can operate in space environments but can not stay in the ¡°protective box¡±, such as the distributed systems to monitor the health and performance of a space craft or rover, to sense the environment for scientific exploration. Thus they must operate reliably in an ambient environment, which, for many missions, will include extreme cold temperatures. A novel module based SiGe hetero-junction bipolar transistor (HBT) technology is designed for future Moon exploration. The mission to the moon requires operation over a range from -180oC to 120oC during the lunar night and day as well as at extended cold temperature. The integrated SiGe HBT has been known for its great performance advantages over Si bipolar-junction transistor (BJT)¡¯s in extreme environments. The ongoing research to study the performance of various materials in cold temperature packaging and to determine the thermal and isothermal durability of multichip packaging structures for SiGe HBT devices in lunar environment will be discussed. In particular, the paper will focus on FEM simulation and reliability assessment of indium (In), which is used as the attachment material in the electronic module. The physics-of-failure (PoF) approach will be used to identify the dominant failure mechanisms in the indium attachment and to model its fatigue life.|
|Rui Wu, Ph.D. Candidate
University of Maryland
College Park, MD