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Development of a Fluxless Flip Chip Bonding Process for Optical Military Electronics
Keywords: Optical, Flip Chip , DOE
As military electronics tend to become lighter, smaller, thinner, and lower cost, the use of flip chip technology is becoming more common place to meet system requirements, yet survive environments. This paper explores the development of an optical flip chip application and details the selection/qualification of the substrate. The selected assembly consists of a procured ULM 1x12 vcsel die, having 80um diameter eutectic AuSn solder bumps at 250um pitch and flip chip bonded to a .006 thick 99.6% alumina substrate with .006 diameter thru holes and metallized with 500 WTi, under minimum 2.0-3.0m (80-120) thin film deposited Au. An 8 run, 3 factor, 2 level Full Factorial DOE was completed on ULM detector arrays and procured UltraSource ceramic substrates using the Suss Microtec FC150. The optimum settings for the peak temperature, peak time and final die z-height were selected using the ANOVA results and interaction plots. Additional studies were completed to qualify in-house produced substrates. An epoxy glob-top encapsulant was selected to dissipate stress on the flip chip solder joints and to enhance thermal shock performance.
Michael Girardi, Engineer
Honeywell FM&T
Kansas City, MO
USA


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