Here is the abstract you requested from the IMAPS_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|High Frequency Characterization of Silicon Carrier Technology for System-in-Package Applications|
|Keywords: electrical characterization, silicon carrier, system-in-package|
|We present the high frequency electrical characterization of an innovative, Silicon Carrier (SC) packaging technology for the integration of both active devices and passive components. The SC technology enables the integration of multiple dice of different IC technologies and passive components. Thus, SC packaging technology makes a strong contribution toward the System-in-Package (SiP) trend. The SC package is conceptually similar to the laminate-based BGA package. The carrier based on SC technology provides densely packed microvias that are distributed over the entire chip surface. The microvias in silicon are realized by electrochemical formation of through pores using macroporous silicon technology, and subsequent filling of the pores with metal. Afterwards thin film technology is used to realize redistribution layers on the carrier. The combination of microvias and multi-layer thin film technology enables very flexible and highly customizable package designs. High-Q inductors and low-loss interconnects are the important roadblock for the further development of SiP technologies at RF and microwave frequencies. The redistribution layers of SC technology makes possible the realization of low-loss, high density transmission lines with precisely controlled characteristic impedances. The technology also allows the realization of high quality planar passives, e.g. inductors and capacitors. We show measurement results up to 65 GHz of microstrip and coplanar transmission lines, single and double layer spiral inductors, and parallel-plate capacitors realized in SC technology. We compare the results to the measurement results of the same passives fabricated on pure silicon substrate and we analyze the influence of microvias on the properties of embedded passives.|
Infineon Technologies AG