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LTCC Integration of High Valued High Q Passive Components
Keywords: embedded, passives, LTCC
System in a Package (SiP) designs continue to scale as more passive components are removed from the carrier substrate and onto the IC. Low valued, low Q passive components are routinely integrated on the IC for high frequency decoupling and impedance matching networks. Although this can greatly decrease the amount of passive components integrated on the surface of the carrier substrate, on-chip integration of passive devices is usually limited to a few hundred picofarads for capacitors and a few nanohenries for inductors with Qs typically less then 10 for both components. These characteristics limit IC passive integration for low frequency and DC decoupling applications. Therefore, the integration of high valued passive components that are necessary for DC bias decoupling and low frequency devices are not addressed by passive device integration on the IC. This presentation will discuss high value passive component integration in LTCC for SiP designs, specifically addressing large valued integrated components for decoupling and low frequency networks. Novel, integrated passive components such as multilayer capacitors using high dielectric constant pastes have been fabricated in LTCC at the Advanced Packaging Laboratory at Purdue University. The capacitors have measured capacitances as high as 10nF in a 6.3mm2 footprint, representing approximately 1500 pF/mm2 of capacitance. Also, high valued, high Q, self-shielding toroid inductors have been fabricated and characterized by the Advanced Packaging Lab. The toroid inductors fabricated achieve inductances as high as 120 nH and measured Qs as high as 50 in the LTCC substrate. The self-shielding nature of the toroid also allows for extremely dense integration without the need for full wave characterization of parasitic couplings to and from neighboring components.
Eric E. Hoppenjans, Graduate Research Assistant
Purdue University
West Lafayette, IN

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