Here is the abstract you requested from the Passives_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Antiferroelectric Thin Films for High-Energy-Density Capacitors|
|Keywords: Antiferroelectric, PLZT, Thin Film|
|With strong demand for miniaturized capacitors in pulsed power and high-power electronic applications, efforts have intensified on developing dielectric materials (including ceramics, polymers and composites) that exhibit high energy density and breakdown strength. The nonlinear dielectric behavior of antiferroelectrics (AFE) under large electric fields provides an effective way to store energy at a high density. We have deposited thin films of (Pb0.92La0.08)(ZrxTi1-x)O3 (PLZT), with 0.9 < x < 1, on Si substrates by chemical solution deposition. Controlled annealing processes resulted in crack-free PLZT films with thicknesses over 1 micron. These films possess good breakdown strength and high dielectric permittivity under the transition in the electric field from AFE to ferroelectric (k,max >1500). This behavior reveals the potential of using AFE PLZT films for energy storage. Processing-microstructure-property relations of AFE PLZT thin films will be discussed. Also, the effect of a LaNiO3 bottom electrode on the orientation and microstructure of PLZT thin films will be reported. Work was supported by the U.S. Department of Energy, Office of FreedomCAR and Vehicles Technology Program, under Contract DE-AC02-06CH11357.|
Argonne National Laboratory