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Development of a Fluxless Flip Chip Bonding Process for Optical Military Electronics
Keywords: Flip Chip, LTCC, Reliability
As military electronics tend to become lighter, smaller, thinner, and lower cost, the use of flip chip technology is becoming more common place to meet system requirements, yet survive environments. This paper explores Sn63 solder flip chip bonding to LTCC substrates metallized with cofired Au and 1000 Angstroms Ti / 19000 Angstroms Pt / 5000 Angstroms Au thin film having the following pad size/pitch geometries: 4 mil/5.5mil, 7.6mil/18mil, and 8.8/19.7mil. A 12 run, 3 factor, 2/3 level full factorial DOE was completed on in house co-fired Au metallized LTCC and procured 63Sn/37Pb solder bumped flip chip test die. Reliability testing (thermal cycle, autoclave, hot storage, and 85/85 humidity) was defined and used to select from the two combinations of optimum settings. A flux removal process was developed and an underfill was selected and found compatible for flip chip bonding to LTCC substrates. A development summary for an optical flip chip device using AuSn solder bumps is also presented.
Michael Girardi, Sr. Engineer
Honeywell Federal Manufacturing and Technologies
Kansas City, MO

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