Here is the abstract you requested from the MASH_2007 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Experimental Results of Total Ionizing Dose Effects on 0.5 Micron SOS MOSFET Test Structures|
|Keywords: Silicon-on-Sapphire , MOSFET , Ionizing|
|Experimental results are presented on the normalized leakage currents and threshold voltages of several hardness-by-designed 0.5µm Silicon-on-Sapphire MOSFET test structures. A Total Ionizing Dose of up to 3000krad(Si) was applied.|
|Mr. Michael Fujita, Microelectronics Engineer
Defense Microelectronics Activity