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Experimental Results of Total Ionizing Dose Effects on 0.5 Micron SOS MOSFET Test Structures
Keywords: Silicon-on-Sapphire , MOSFET , Ionizing
Experimental results are presented on the normalized leakage currents and threshold voltages of several hardness-by-designed 0.5m Silicon-on-Sapphire MOSFET test structures. A Total Ionizing Dose of up to 3000krad(Si) was applied.
Mr. Michael Fujita, Microelectronics Engineer
Defense Microelectronics Activity
McClellan, CA

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