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Deposition of Ba1-xCaxTi1-yZryO3 Thin Films on HR-Si Substrate by RF Magnetron Co-Sputtering System
Keywords: microwave, DOE, Co-sputtering
High dielectric performance of ferroelectric materials has been investigated widely due to their feasibility in microwave devices applications. In this research, the optimum composition of Ba1-xCaxTi1-yZryO3 films doping yttrium used DOE method to reach low loss and high dielectric constant at microwave region. BCZT films were deposited on LaNiO3 (LNO)/Au/Ti/High-resistivity silicon substrate in MIM Structure by a RF magnetron co-sputtering system. The LNO buffer layer to enhance (100) direction growth of the BCTZ films, and high resistivity silicon was used to inhibit substrate loss. The mole fraction of x =0~0.1, y=0.1~0.25, to discuss the different composition of Ca and Zr influence the dielectric properties of the films. We used circular-path capacitor structure and a loss corrected model to measure the microwave characteristic. As deposited temperature at 700C, Ca doping 10 at%, Zr doping 25 at%, and Y doping 3 at%, the ferroelectric films have the better dielectric properties and lowest loss at 2.45GHz. The dielectric constant is 91 and dielectric loss is 0.019. The film structures were determined by the X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). High frequency (>1 GHz) dielectric properties were investigated by Agilent E8364A network analyzer.
Hsin-Hsien Yeh, Student
National Tsing Hua University
Hsinchu, Taiwan 30013,

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