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SiC & GaN Die Attach for Extreme Environment Electronics
Keywords: Die Attach, SiC, Extreme Environments
It has been demonstrated that wideband gap devices fabricated from SiC, or GaN grown on SiC, can operate over a much wider temperature range than traditional silicon or GaAs devices. However, most of the packaging technology in use to today was developed for silicon or GaAs devices and much of this technology is fundamentally limited in its temperature range. For example the common die attach solders in wide spread us melt below 300 oC, and are therefore inadequate for many of these new wide band gap devices some of which can operate above 400 oC. Therefore, new technologies are needed to enable the wide spread use of these new devices at elevated temperatures. In particular suitable die attach methods are a key concern since many of these new devices are intended for power or microwave circuits and therefore utilize active die backs. Regrettable there is little long-term reliability data in the literature that can be used to evaluate die attach materials for these applications. This paper seeks to address this fundamental problem by providing long term reliability data on a number of die attach materials that are suitable for operation of these devices in excess of 200 oC. Baseline shear-strength data for solders and adhesives suitable for high temperature die attach will be presented as well as data on accelerated aged samples of SiC devices bonded to typical substrate materials. Aging of the samples will consist of both high temperature storage as well as thermal shock.
Srikanth Kulkarni, Graduate Research Assistant
University of Idaho
Moscow, ID
USA


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