Here is the abstract you requested from the IMAPS_2008 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Full-Tape-Thickness Thick Film Features Enable New Capabilities in LTCC|
|Keywords: full-tape-thickness thick-film, LTCC, solid fill, low-resistance traces|
|Full tape thickness structures (conductors, high K and low K dielectrics, sacrificial materials, ferrites, and ) are useful as both technically and cost effective approaches to multiple needs in laminate microelectronic and microsystem structures. Lowering resistance in conductor traces of all kinds, raising Q-factor in coils, and enhancing EMI shielding in RF designs are a few of the modern needs. By filling with suitable dielectric compositions one could deliver embedded capacitors with an appropriate balance between mechanical compatibility and safety factor for fabrication. Similar techniques applied to ferrite cores can provide ferrite cores without wasteful manufacturing practices when the ferrite is a small fraction of the overall circuit area. Finally, to open the technology of unfilled volumes for radio frequency performance as well as microfluidics and mixed cofired material applications, the full tape thickness implementation of sacrificial volume materials (SVM) is also considered. We provide data on successful implementations of cofired FTT structures and discuss technical problems and the promise such structures hold for the future.|
|Richard T. Knudson, Distinguished Member of the Technical Staff
Sandia National Laboratories