Here is the abstract you requested from the rf_2008 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Use of Cu Heat Spreader for Improved Thermal Spreading|
|Keywords: RF Power Transistors, Cu-Spreader, Microthermal IR|
|Present RF power transistors continually require increased power and efficiency to support the upcoming needs of telecommunications industry, especially in the areas of wide-band gap and 3G applications. Often, commercial applications struggle with the need to constantly reduce package costs while improving thermal performance. This technical brief focuses on the implementation of a Cu-spreader for two standard CuW LDMOS packages to increase their utility in higher power applications. This methodology is paramount to minimize costs for existing footprints, using established material sets, and improving thermal efficiency required by the industry. Microthermal IR imaging of steady state test die operation will be correlated to theoretical heat transfer models and compared to results of standard CuW package.|
|Larry Chatfield, Sr. Product Development Engineer
Kyocera America Inc.
San Diego, CA