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Use of Cu Heat Spreader for Improved Thermal Spreading
Keywords: RF Power Transistors, Cu-Spreader, Microthermal IR
Present RF power transistors continually require increased power and efficiency to support the upcoming needs of telecommunications industry, especially in the areas of wide-band gap and 3G applications. Often, commercial applications struggle with the need to constantly reduce package costs while improving thermal performance. This technical brief focuses on the implementation of a Cu-spreader for two standard CuW LDMOS packages to increase their utility in higher power applications. This methodology is paramount to minimize costs for existing footprints, using established material sets, and improving thermal efficiency required by the industry. Microthermal IR imaging of steady state test die operation will be correlated to theoretical heat transfer models and compared to results of standard CuW package.
Larry Chatfield, Sr. Product Development Engineer
Kyocera America Inc.
San Diego, CA
USA


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