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Bias-Dependent MOS Transistors Thermal Resistance and Non-uniform Self-heating Temperature
Keywords: MOSFET, thermal resistance, temperature non-uniformity
In this paper, the relationship of the biasing condition and self-heating effect of a multi-finger MOSFET device are examined using various channel currents ranging from triode to saturation regimes. When temperature non-uniformity is generated due to transistor self-heating, the local thermal resistance is conventionally defined through the difference between the hottest local temperature and the backside temperature. It was found that the thermal resistance independence of input power only valid if take into consideration the size and shape change of heating body. We study the evolution of MOSFET self-heating through both direct thermoreflectance imaging observation and a three dimensional analytical heat dissipation model of the device. The device thermal resistance is found can change by a factor bigger than 5 for different drain-source voltages. Even in the saturation regime, the thermal resistance of the transistor can change by 50% as a function of bias. Micro-second time resolution transient thermoreflectance images have also been taken to assist understanding of the heat generation and dissipation process inside individual MOSFET.
Xi Wang, Ph.D. Student, Graduate Research Student
University of California Santa Cruz
Santa Cruz, CA

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