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Overview of Fine Pitch Wire Bonding Development on Low k/Cu Wafers for High Reliability Performance
Keywords: wire bond, wirebonding, reliability
All market segments including the automotive industry continue to put cost pressure on semiconductor packaging suppliers in order to stay competitive. Wire bond technology for IC devices has been the backbone of the semiconductor industry to serve automotive customers for many years. The drive for fine pitch wire bonding is to reduce silicon area, increase potential die per wafer and lower die cost. Fine pitch geometry has created unique challenges in proving wire bonding reliability. The bond pad damage due to probe process can interfere with wire bonding, and thus a novel method is introduced to design a bond pad so as to separate probe and wire bond region without increasing die size. Special bond pad design called POP (Probe Over Passivation) and EAP (Extended Armor Pad) are introduced. Challenges experienced during the qualification of an automotive device will be disclosed. Challenges range from wire pull test method and procedure, interpretation of the wire pull result and failure mode, and the sensitivity of package de-processing method to fine pitch balls. Alternative methods including mechanical simulations and extended package reliability testing were used to demonstrate the robustness of small ball bonds in an automotive application. A set of recommendations will be derived to ensure that quality fine pitch bonds can be implemented in applications demanding high level of reliability.
Chu-Chung Stephen Lee, Principle Staff Engineer
Freescale Semiconductor Inc.
Austin, TX

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