Micross

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Ribbon Bonding for High Frequency Applications
Keywords: ribbon bonding, high frequency, semiconductor interconnections
Interconnecting semiconductors with ribbon rather than round wire has been popular in high frequency electronics for a long time. Surprisingly there are still countless applications bonded traditionally with round wires and ball bonders even so the electrical performance of the product could benefit from ribbon bonding technology. Reasons for this hesitation to adopt ribbon technology can be found in the machine supplier market. Fully automatic ribbon bonders with sufficient specification properties to win by cost of ownership have only been available for a few years. All those applications which could also be bonded with round wire and ball bonders were waiting for the right equipment technology to come forward even if traditional wire bonding was a compromise on the product performance. The steep increase in the gold price and the continuous demand for gold in the electronics manufacturing market is adding significance to the choice of semiconductor interconnection. Ribbon bonding technology allows reducing the cross section area of the gold bond while maintaining or increasing the surface area at the same time. Some high frequency electronic packages could be changed from 2 mil round wire to mil x 3 mil ribbon and be produced at lower material cost (less gold volume) with the same electrical performance (same surface area per bond). The development of the gold prices can be expected to make such a change even more attractive in the future.
Roberto Gilardoni, Applications Engineer
Hesse & Knipps GmbH
Paderborn 33100,
Germany


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