Here is the abstract you requested from the CICMT_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Fabrication of High-K Dielectric Nanofilms using Solution-Based Bottom-Up Nanotechnology|
|Keywords: High-k dielectrics, Bottom-up nanotechnology, Oxide nanosheets|
|The integration of high permittivity (k) dielectrics into microelectronic devices, combined with the size reduction constraints, is a current challenge in the semiconductor industry. In this study, we demonstrate a novel fabrication procedure for high-k dielectric nanofilms by using of oxide nanosheets as a building block. A variety of oxide nanosheets (such as Ti0.87O2, TiNbO5, Ti2NbO7, Nb3O8 and perovsites) were synthesized by delaminating appropriate layered precursors into their molecular single sheets. These nanosheet only consists of TiO6 and NbO6 octahedra, a key building block of oxide dielectrics, which makes the nanosheet as an ideal base for high-k dielectrics with the critical thickness. Layer-by-layer assembly was employed to fabricate high-k dielectric nanofilms of these nanosheets on atomically-flat Pt or SrRuO3 substrates. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure with an atomically sharp interface. These nanofilms exhibited both high dielectric constant (100~300) and low leakage current density (< 10-7 A/cm2) for thickness down to 5 nm while eliminating problems resulting from the size effect. Our bottom-up approach provides a rational design and construction of high-k devices.|
|Minoru Osada, Senior Researcher
National Institute for Materials Science
Tsukuba, Ibaraki 305-0044,