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Ultra Thin Wafer Dicing- Minimizing Costs and Maximizing Die Break Strength
Keywords: Laser, Die Break Strength, Ultra Fast
This paper reviews the current issues associated with dicing sub-100micron thick wafers and compares these with the results from ultra fast laser "full-cut" singulation. The semiconductor industry needs to produce an increasing number of thinned wafers on logic, DRAM and NAND FLASH devices driven by the need for 3D semiconductor packaging. Current solutions for singulating thin wafers include mechanical saw (which is a well understood process), laser dicing using nano-second(ns) UV lasers (both with and without post cut etching) and new the introduction of Ultra Fast Lasers. Success criteria for the singulation process include, throughput, cost and yield. Two of the major factors affecting yield are Die Break Strength (DBS) and Heat Affected Zone(HAZ). Other factors such as the ability to cut Die Attach Films (DAF) without undercutting or "curing" are also known to contribute to yield but are not included in this paper. Measuring DBS and HAZ in a meaningful and repeatable way is extremely challenging. ESI has extensively studied these two issues and this paper discusses the theory and experimental results for both conventional nano-second(ns) lasers and newer Ultra Fast lasers.
Paul Kirby, Product Manager
ESI
Portland, OR
USA


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