Here is the abstract you requested from the DPC_2009_3D technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Simultaneous Copper Electroplating of TSV and RDL Formations on Wafer 3D Structures|
|Keywords: TSV, RDL, Cu electroplatng|
|Copper electroplating for TSV filling is well understood and is being adapted by many fabs. The process of I/O pad redistribution by copper plating has been in production for many years as well. The combination of filling TSV's and forming RDL conductors simultaneously remains a challenge. This paper will discuss the latest results in process development of copper electroplating process that fills small diameter vias and forms 5 to 10 µ thick RDL traces on the wafer surface at the same time. The discussions will describe the necessary tools, chemistry and wafer requirements to make the simultaneous plating of TSV’s and RDL structures possible.|
|Robert S. Forman, Business Development Manager
Rohm and Haas Electronic Materials
Gig Harbor, WA