Micross

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Simultaneous Copper Electroplating of TSV and RDL Formations on Wafer 3D Structures
Keywords: TSV, RDL, Cu electroplatng
Copper electroplating for TSV filling is well understood and is being adapted by many fabs. The process of I/O pad redistribution by copper plating has been in production for many years as well. The combination of filling TSV's and forming RDL conductors simultaneously remains a challenge. This paper will discuss the latest results in process development of copper electroplating process that fills small diameter vias and forms 5 to 10 thick RDL traces on the wafer surface at the same time. The discussions will describe the necessary tools, chemistry and wafer requirements to make the simultaneous plating of TSVs and RDL structures possible.
Robert S. Forman, Business Development Manager
Rohm and Haas Electronic Materials
Gig Harbor, WA
USA


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