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High Accuracy Placement, and In-Situ Reflow or Thermo-Compression Bonding Enabling High Density and Fine Pitch in 3D-IC with Chip to Wafer Bonding Approach, Illustrated by an Application using Micro-Insertion
Keywords: 3D, TSV, interconnect
With the advent of 3D-IC and the increased Packaging density, the introduction of Through Silicon Via technology and the associated High Accuracy Placement and Bonding Challenges introduce new requirements to make Chip to Wafer population a reality. It becomes even more critical when Chip Sizes increase while the Bumps dimensions or the TSV pitches decrease. The paper describes In-Situ Reflow and Thermo-Compression Techniques compatible with interconnection metal-to-metal or with creation of inter metallic (i.e. Cu-Cu, CuSn). The Thermo-Compression will be illustrated by a technique of micro insertion into indium for an imager application.
Gilbert Lecarpentier, Product Manager
SET, Smart Equipment Technology
Saint Jeoire 74490,

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