Here is the abstract you requested from the DPC_2009_3D technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|High Accuracy Placement, and In-Situ Reflow or Thermo-Compression Bonding Enabling High Density and Fine Pitch in 3D-IC with Chip to Wafer Bonding Approach, Illustrated by an Application using Micro-Insertion|
|Keywords: 3D, TSV, interconnect|
|With the advent of 3D-IC and the increased Packaging density, the introduction of Through Silicon Via technology and the associated High Accuracy Placement and Bonding Challenges introduce new requirements to make Chip to Wafer population a reality. It becomes even more critical when Chip Sizes increase while the Bumps dimensions or the TSV pitches decrease. The paper describes In-Situ Reflow and Thermo-Compression Techniques compatible with interconnection metal-to-metal or with creation of inter metallic (i.e. Cu-Cu, CuSn). The Thermo-Compression will be illustrated by a technique of micro insertion into indium for an imager application.|
|Gilbert Lecarpentier, Product Manager
SET, Smart Equipment Technology
Saint Jeoire 74490,