Here is the abstract you requested from the DPC_2009_3D technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Development of Second Generation 3D Devices|
|Keywords: 3D, Memory, Copper|
|While commercial deployment of 3D remains at best small, efforts to develop a second generation using more of the inherent advantages of 3D are underway. There are new lessons learned as greater maturity occurs in both the design as well as the manufacturing process. In this presentation we will be reviewing the latest results and discussing the evolution of CAD, tools, and practices. The second-generation devices are +1Gb DRAMs compatible with industry standard DDR2 and DDR3 devices and a new generation of memories meant for intimate attachment providing greater than a 10x improvement in bandwidth. The intimate attached devices exploit a die to wafer process using virtually the same technology as the wafer-to-wafer flow, however, it does then also allow a KGD methodology.|
|Robert Patti, CTO
Tezzaron Semiconductor Corporation