Micross

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Thermal Performance of High Power Light Emitting Diodes: Die Attach Material and Bond-line Thickness Dependence
Keywords: high power LED, junction temperature measurement, finite element techniques
In this work, the forward voltage method for the junction temperature measurement for high power LEDs is verified through numerical simulations using finite element techniques. Specifically the junction temperature for the high power LEDs packaged with various die attach materials of different thermal properties, is numerically investigated for a given bond-line thickness. In addition, for the high power LEDs packaged with a given die attach material but with different bondline thicknesses, ranging from micron to nanometer, is also numerically investigated. For both cases, the experimental results are found to be fully supported by the simulation results. Implications of the present results to the packaging process development and thermal management of high power LEDs are discussed.
Bohan Yan, Student
University of California-Irvine
Irvine, CA


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