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Development of Vertical Integration of MEMS Inertial Sensors and Devices
Keywords: MEMS, Inertial Sensors, Vertical Integration
The development of inertial devices in MEMS structures represents a unique challenge particularly for low-g or low spin rate sensing applications. In general, the requirement to sense small inertial forces drives designers to construct devices with large inertial masses. With normal, single wafer SOI techniques this implies the use of large footprints. In this paper work is presented on the use of vertical integration techniques to provide larger masses by increasing the total volume without increasing the areal footprint of the sensor. In addition, the techniques presented here give MEMS designers the flexibility to combine different types of sensors together into a single, fully integrated device. An example of the construction of one such sensor system consisting of in-plane and out-of-plane inertial sensors is presented. The technical challenges encountered and methodologies used to resolve these issues are presented with an analysis of the results.
Dr. Philip J. Reiner, Chief Scientist
Stanley Associates Inc.
Huntsville, AL

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