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Development of the First Commercialised Integrated Circuit Process Operating in the Range of 300C to 450C
Keywords: Extreme Temperature Semiconductors, Silicon Carbide CMOS, Energy Applications
Raytheon Systems Limiteds High Temperature Silicon Carbide Electronics (HiTSiC) project will deliver a new Silicon Carbide (SiC) materials process to realise high-temperature electronics (min 300C with 450C target) primarily for energy applications but needs basic research to address challenges associated with realising a scaleable semiconductor process. The project will model the device process and performance, will asses prototype devices, and will develop and demonstrate practical SiC-based circuits for power electronic gate drive and sensor applications. In addition the project will research and develop new SiC device models and assess these against practical results. The novel and timely basic research project will research Silicon Carbide (SiC) materials and processes for Complementary Metal Oxide Semiconductor (CMOS) structures to provide a unique design and manufacturing capability for high temperature SiC low-voltage electronics. Target applications are: extreme environment sensors and instrumentation for oil, gas, and renewables; automotive and aerospace systems; efficient electrical energy generation, distribution and utilisation. Significant technical challenges are being addressed in the creation of a MOS integrated circuit process operating in temperature extremes where all other existing integrated circuit technologies do not function. In addition to the background to the development project and the applications perspective, this paper will outline the main technical challenges in the project and the approaches RSL are taking to address the challenges.
James A. McGonigal, Executive
Raytheon Systems Limited
Glenrothes, Fife KY7 5PY,

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