Here is the abstract you requested from the HiTEN_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|HTNFET Junction Capacitance Measurements, Theoretical Model and Validation for Development of High-Temperature Wireless Sensor Networks|
|Keywords: Junction capacitance characterization, Transistor model, Voltage-controlled oscillator|
|This paper proposes a theoretical model for the high-temperature silicon-on-insulator (SOI) n-channel power field-effect transistor (HTNFET) manufactured by Honeywell SSEC. A theoretical analysis of the behaviour of transistor capacitances taking into account temperature and transistor polarization point is performed. In addition, a methodology for the measurement of transistor pn-junctions capacitances – drain-to-source CDS, gate-to-source CGS, and gate-to-drain CGD – is adapted from the literature and presented, along with the test apparatus that has been developed. The capacitance measurements under various polarization and temperature conditions are then presented and discussed. Moreover, a comparison of capacitances predicted from theory to measured values is realized. A high-temperature voltage-controlled oscillator (HTVCO) designed for operation at temperatures in excess of 250°C is introduced and used as an additional standard to validate capacitance measurements and the transistor model, with respect to operating oscillating frequency values measured while varying both transistor polarization and temperature (from room temperature to 250°C). This circuit is selected for a comparative analysis as it is built with the HTNFET and because its behaviour has already been well characterized by the authors. The capacitance measurement results are analyzed and used jointly with the proposed transistor model as the basis of a theoretical oscillating frequency computation of the HTVCO. Finally, predicted and measured performances are compared and results are discussed. The work presented constitutes a theoretical basis for the design of circuits using the HTNFET such as the high-temperature voltage-controlled oscillator (HTVCO) which can be used to perform frequency modulation for wireless communications in the context of ruggedized wireless sensor networks; that is sensor networks which are designed to operate in very adverse conditions such as fire fighting and industrial applications.|
|Jonathan Gagnon, Research Professional
École de Technologie Supérieure
Montreal, Quebec H3C 1K3,