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Performance and Reliability of SiGe Devices and Circuits For High Temperature Applications
Keywords: Silicon-Germanium (SiGe) HBTs, high temperature, bandgap reference circuit
An investigation of the performance and reliability issues associated with operating silicon-germanium (SiGe) devices and circuits at temperatures up to 300C is presented. Using bandgap engineering, SiGe BiCMOS technology effectively combines III-V transistor speeds with the cost and integration advantages associated with CMOS manufacturing. SiGe technology has been shown to possess compelling advantages for operation in both cryogenic and radiation-intense environments, but little attention has been paid to its potential capabilities at high temperatures. SiGe heterojunction bipolar transistors (SiGe HBTs) from a first-generation, commercially-available SiGe BiCMOS technology have been verified to maintain acceptable functionality over a suitable range of bias conditions up to 300C. The addition of radiation-hardening-by-design (RHBD) techniques to the SiGe HBT has been found to suppress collector-substrate leakage currents by a factor of two above 175C. At the circuit level, a precision SiGe bandgap reference (BGR) circuit is shown to maintain functionality to 300C. An exponential-compensation architecture is demonstrated to improve the high temperature performance of the SiGe BGR circuit, and when combined with RHBD SiGe HBTs, achieves a less than 1 mV drift from room temperature to 225C, in addition to improved performance at 300C. Finally, long-term reliability testing results are presented that indicate these SiGe BGR circuits can withstand 250+ hours at 300C with minimal degradation.
Dylan B. Thomas, Student
Georgia Institute of Technology
Atlanta, GA

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