Here is the abstract you requested from the HiTEN_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Performance and Reliability of SiGe Devices and Circuits For High Temperature Applications|
|Keywords: Silicon-Germanium (SiGe) HBTs, high temperature, bandgap reference circuit|
|An investigation of the performance and reliability issues associated with operating silicon-germanium (SiGe) devices and circuits at temperatures up to 300°C is presented. Using bandgap engineering, SiGe BiCMOS technology effectively combines III-V transistor speeds with the cost and integration advantages associated with CMOS manufacturing. SiGe technology has been shown to possess compelling advantages for operation in both cryogenic and radiation-intense environments, but little attention has been paid to its potential capabilities at high temperatures. SiGe heterojunction bipolar transistors (SiGe HBTs) from a first-generation, commercially-available SiGe BiCMOS technology have been verified to maintain acceptable functionality over a suitable range of bias conditions up to 300°C. The addition of radiation-hardening-by-design (RHBD) techniques to the SiGe HBT has been found to suppress collector-substrate leakage currents by a factor of two above 175°C. At the circuit level, a precision SiGe bandgap reference (BGR) circuit is shown to maintain functionality to 300°C. An exponential-compensation architecture is demonstrated to improve the high temperature performance of the SiGe BGR circuit, and when combined with RHBD SiGe HBTs, achieves a less than 1 mV drift from room temperature to 225°C, in addition to improved performance at 300°C. Finally, long-term reliability testing results are presented that indicate these SiGe BGR circuits can withstand 250+ hours at 300°C with minimal degradation.|
|Dylan B. Thomas, Student
Georgia Institute of Technology