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High-Temperature SOI CMOS Compatible MEMS Pressure Sensors
Keywords: Pressure Sensor, HT Circuit Design, SOI CMOS
A MEMS (Micro-Electro-Mechanical System) option for pressure sensors has been integrated into the Fraunhofer IMS 1m High-Temperature SOI CMOS process. The pressure sensors built using this option consist of polysilicon diaphragm over active areas, together forming a capacitor whose capacitance depends on the deformation of the diaphragm by ambient pressure. The pressure range of these sensor elements depends on the diameter of the diaphragm: As the diaphragm become stiffer with decreasing diameter, the force needed for deformation increases. Thus diaphragms with smaller diameters will have a higher temperature.
Rene Lerch, Group Leader
Fraunhofer IMS
Duisburg, NRW 47057,
Germany


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