Here is the abstract you requested from the HiTEN_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|High-Temperature SOI CMOS Compatible MEMS Pressure Sensors|
|Keywords: Pressure Sensor, HT Circuit Design, SOI CMOS|
|A MEMS (Micro-Electro-Mechanical System) option for pressure sensors has been integrated into the Fraunhofer IMS 1µm High-Temperature SOI CMOS process. The pressure sensors built using this option consist of polysilicon diaphragm over active areas, together forming a capacitor whose capacitance depends on the deformation of the diaphragm by ambient pressure. The pressure range of these sensor elements depends on the diameter of the diaphragm: As the diaphragm become stiffer with decreasing diameter, the force needed for deformation increases. Thus diaphragms with smaller diameters will have a higher temperature.|
|Reneé Lerch, Group Leader
Duisburg, NRW 47057,