Here is the abstract you requested from the HiTEN_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Introduction of Texas Instruments High Temperature Semiconductors|
|Keywords: semiconductor, high temperature, silicon|
|This paper describes the development of high temperature semiconductor devices at Texas Instruments. Texas Instruments HiRel group is supporting catalog TI semiconductors that operate from -55C to 210C to support electronic operation in extremely harsh environments such as downhole oil and gas well applications. A complete signal chain of devices including op amps, data converters, power management, interface, and processors are being characterized for use at extreme temperatures. These parts are based on standard designs used for commercial applications with additional support for extended temperature qualification, operating life testing, and packaging. TI uses many different process technologies on both bulk silicon and SOI to fabricate die. Several of these standard technologies provide good performance across temperature for both digital and analog functions. Process information and characterization information will be presented on several devices with information on operating life expectations. The development and release of new surface mount ceramic packaging and Known Good Die(KGD) allow ruggedized boards and MultiChip Modules(MCM) to be built to withstand elevated temperatures. The use of Al and Cu/Ni/Pd bond pads on various devices will be discussed.|
|Mont Taylor, Harsh Environment Segment Manager