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SOI Lateral PIN Diodes for Temperature and UV Sensing in VeryHarsh Environments
Keywords: SOI PIN diode, temperature sensor, UV sensor
We study the use of lateral SOI PIN diodes as thermometers and Ultra-Violet photo-detectors in a large range of temperature from -175°C to 300°C and under radiations. These diodes indeed show very linear voltage vs temperature characteristics when biased with a constant current and can be successfully used in an integrated temperature sensor [1]. Similarly, they show high quantum efficiency for UV light sensing measured from -175°C to 125°C up to now. They have also been embedded in a dedicated readout circuit [2]. The diodes characteristics after neutron irradiation are also discussed. The diodes are implemented in two fully-depleted SOI technologies: UCL 2µm process and OKI 0.15µm industrial process [3, 4]. [1] B. Rue, D. Flandre, “A SOI CMOS smart high-temperature sensor”, Hiten 2007. [2] O. Bulteel, A. Afzalian, D. Flandre, “Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications”, to be published in Analog Integrated Circuits and Signal Processing 2009. [3] D. Flandre, in: R. Kirshmann (Ed.), High Temperature Electronics, IEEE press, 1998, p.303. [4] A. Uchiyama, S. Baba, Y. Yoshiki, J. Ida, “Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications”, Int. IEEE SOI conf, 2006.
Bertrand Rue,
University Catholique de Louvain-la-Neuve
Louvain-la-Neuve 1348,
Belgium


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