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|SOI Lateral PIN Diodes for Temperature and UV Sensing in VeryHarsh Environments|
|Keywords: SOI PIN diode, temperature sensor, UV sensor|
|We study the use of lateral SOI PIN diodes as thermometers and Ultra-Violet photo-detectors in a large range of temperature from -175°C to 300°C and under radiations. These diodes indeed show very linear voltage vs temperature characteristics when biased with a constant current and can be successfully used in an integrated temperature sensor . Similarly, they show high quantum efficiency for UV light sensing measured from -175°C to 125°C up to now. They have also been embedded in a dedicated readout circuit . The diodes characteristics after neutron irradiation are also discussed. The diodes are implemented in two fully-depleted SOI technologies: UCL 2µm process and OKI 0.15µm industrial process [3, 4].  B. Rue, D. Flandre, “A SOI CMOS smart high-temperature sensor”, Hiten 2007.  O. Bulteel, A. Afzalian, D. Flandre, “Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications”, to be published in Analog Integrated Circuits and Signal Processing 2009.  D. Flandre, in: R. Kirshmann (Ed.), High Temperature Electronics, IEEE press, 1998, p.303.  A. Uchiyama, S. Baba, Y. Yoshiki, J. Ida, “Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications”, Int. IEEE SOI conf, 2006.|
University Catholique de Louvain-la-Neuve