Here is the abstract you requested from the HiTEN_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Fabrication and Characterization of High Temperature Film Capacitors|
|Keywords: capacitor, high temperature, temperature stability|
|Capacitors that perform well at temperatures exceeding 200C and have energy densities in excess of 1 J/cm3 are an enabling technology for many applications in automotive, geophysical exploration, aerospace, and the military. To address this need Nanohmics has produced temperature-stable film capacitors using amorphous silicon dioxide as the dielectric material. The capacitors are fabricated by depositing ~0.4 µm films of silicon dioxide on both sides of a 13 µm metalized kapton substrate to form dielectric-coated electrodes. Next, two coated electrodes are wound together into a cylindrical shape to produce the capacitor core. Electrical contact is then made to the ends of the cores and electrical wires are attached to the contacts. Measurements indicate that capacitors with amorphous silicon dioxide dielectric have stable capacitance, dissipation factor, and breakdown threshold over a wide temperature range. Nanohmics will present lifetime test results that show 1-2 uF films capacitors fabricated using SiO2 dielectric have stable properties over a wide temperature range and a lifetime in excess of 1,000 hours at temperatures above 150C under applied voltages exceeding 50 VDC. This work was supported by AF contract FA8650-05-C-2628.|
|Keith D. Jamison,