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High Temperature Power Electronics IGBT Modules for Electrical and Hybrid Vehicles
Keywords: IGBT, Power Electronics, Electrical and Hybrid Vehicles
IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles applications. Applications with low switching frequencies (<20 kHz) are typically dominated by IGBTs, which shows a threshold voltage of about 0,8V due to the pn junction at the back side. Especially application for high voltage DC link (>400V) applications favour IGBT in bridge circuit configuration. Due to this characteristic IGBT semiconductors provide better conversion efficiency for applications which utilize higher current densities and increased junction temperatures favour the IGBT. Removing the barrier of maximum junction temperature at 150C allows a significant increase in power density or simplified cooling. The barrier is set by solder fatigue and wire bond lift off at intermittent operation. New packaging technologies are eliminating the reliability issue and the IGBT integrated modules take advantage of developments in PCBs and passives. High temperature characteristics of silicon devices, i.e. emitter controlled free wheeling diodes and IGBT with trench and field-stop are considered in these modules. Increasing the junction temperature from TJ=150C to TJ=200C would increase switching losses by approximately 10%. Blocking characteristics improved by introducing trench and field-stop-IGBTs, will results in lower leakage current increase with TJ. Therefore 600V- and 1200V-chips losses caused by leakage current will stay below critical limits, even at TJ=200C. This paper will present the latest developments in the area of IGBT devices used for electronics in electrical and hybrid vehicles.
Reiner John,
Infineon Technologies
Neubiberg, Munich 85579,

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