Here is the abstract you requested from the HiTEN_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A Non Volatile MEMS Switch for Harsh Environment Memory Applications|
|Keywords: Non Volatile Memory, MEMS Switch, High Temperature Operation|
|We report fabrication of a non-volatile MEMS switch used as a memory cell with operating temperature range of -150°C to 350°C. The unique MEMS switches are integrated in a micro cavities during the interconnect processing of the IC; embedding them between two standard metal layers in a typical 4 metal level standard 180nm node interconnect. This then eliminates the need that typical MEMS devices need for unique and difficult packaging. The MEMS switch consists of refractory metal as a MEMS membrane that is submicron in thickness, which enables operation at a much wider temperature range without the relaxation issues of ductile metals associated with extended temperature range. The submicron MEMS membrane coupled with nanometer-sized gaps enables native voltage operation. The primary target application is either embedded or stand-alone non-volatile memory for harsh environment that involves operation at temperatures above 250°C. This non-volatile MEMS memory switch operates at typical native CMOS voltage with switching speed on the order of 100 ns and has endurance of at least 1 Million cycles. Data retention capabilities have been demonstrated at up to 400°C. Characteristic data of this switch including reliability performance will be presented at the conference.|
|Vikram Joshi, Manager, Device Integration
Cavendish Kinetics, Inc.
San Jose, CA