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High-Power and High Temperature SiC Power Module Development
Keywords: SiC power device, motor drive, high temperature applications
The present paper discusses the development of a high-power SiC half-bridge power module capable of operation at high-temperature (250°C). Module construction including package, substrate materials, die attach and wire bonds are first discussed. SiC power device selection and electrical characterization over temperature is discussed. Pertinent measurements such as device leakage and breakdown voltage over temperature are investigated. Following, application specific testing of the module is analyzed. These include a high-efficiency 10kW inverter, a high power density DC-DC converter, and a 3-phase motor drive. The benefits of the developed SiC module in each application are discussed. Where possible, the module is compared to a state of the art Silicon based system. High temperature operation and testing of the 3 phase motor drive (4kW 250°C ) is discussed in detail. Design tradeoffs including temperature performance versus efficiency and possible increases in power density are discussed. The development of complimentary support circuitry capable of high temperature operation is then discussed. This includes high-temperature output inductors for filtering and power device drive electronics. Finally, future work addresses integration of the support circuitry with the developed SiC power module; ultimately, a high-temperature, SiC based Intelligent Power Module (IPM) design is desired. To this end, a technology road map for accomplishing this goal is presented.
Gavin Mitchell, Design Engineer
Arkansas Power Electronics International
Fayetteville, AR

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