Here is the abstract you requested from the IMAPS_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A Cost-Effective PVD Thin Film Deposition System for the 3-D TSV Barrier/Seed Application and Beyond|
|Keywords: 3-D advanced packaging, TSV, barrier/seed metallization|
|As technology complexity continues to grow in advanced IC electronics packaging, more cost effective use of capital equipment becomes mandatory. The process and cost performance of a PVD system for 3-D TSV barrier/seed metallization solution is reported. A single chamber-multi-wafer bridge tool for multiple TSV generations is configured. The TSV hardware configuration with i-PVD for batch processing improves productivity and methods to prevent via necking and at mean time enable high step coverage on aspect ratio of 10:1 vias with CD down to 5 µm. Cross-section SEM analysis on the vias with various CDs and aspect ratios shows good step coverage as deposited. Conformal post-electro-plating results confirm the continuous seed coverage. Cost of deposition is also reported and compared to other steps in the TSV integration.|
|Alex Wang, Director Business Development
Tango Systems, Inc.
San Jose, CA