Here is the abstract you requested from the IMAPS_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A High-Temperature, High-Voltage SOI Gate Driver IC with High Output Current and On-Chip Low-Power Temperature Sensor|
|Keywords: high temperature, SOI gate driver, temperature sensor|
|High-temperature power conversion modules (DC-DC converters, inverters, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, and well logging. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing Silicon Carbide (SiC) based power switches (MOSFET or JFET). Wide bandgap material SiC is capable of much higher temperature operation than conventional Silicon based power devices. For successful realization of such high temperature power conversion modules, associated control electronics also need to perform at high temperature. This abstract presents a Silicon-on-Insulator (SOI) based high-temperature, high-voltage gate driver integrated circuit with improved peak output current drive over previous work and on-chip low-power temperature sensor. This driver IC has been primarily designed for automotive applications where the under hood temperature can reach 200°C. This new gate driver prototype is designed and implemented in a 0.8-micron, 2-poly, and 3-metal Bipolar-CMOS-DMOS (BCD) on SOI process and has been successfully tested up to 200ºC ambient temperature driving a SiC MOSFET or SiC normally-ON JFET. In this design, the peak output current capability of the driver is 5 A to drive several power switches connected in parallel. Chip-level layout techniques are used to enhance reliability of the circuit at high temperature. A Schmitt trigger input stage buffer provides immunity to noise that would otherwise corrupt the input digital logic signal. An ultra low power on-chip temperature supervisory circuit has also been integrated into the die to safeguard the driver circuit against excessive die temperature (≥220°C). This approach utilizes the increased diode leakage current at higher temperature to monitor the die temperature. Up to 200°C, the power consumption of the temperature sensor circuit is less than 10 μW. Test results for this new design will be included in the full paper.|
|Mohammad A Huque, Graduate Student
The University of Tennessee