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Packaging of High Temperature 50 kW SiC Motor Drive Modules for Hybrid-Electric Vehicles
Keywords: Silicon Carbide, High-Temperature, Power Electronics Packaging
The researchers at Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature (250+C), high-performance 50kW integrated motor drive incorporating Silicon-Carbide (SiC) based switch technology, MCM gate driver, and high-temperature packaging technologies. As the demand for hybrid- and fully-electric vehicles continues to rise, the requirements of the requisite power electronics systems (namely, the power density, size, and weight) are rapidly surpassing the limits of current technology. As such, a large effort has been placed in the development of wide band gap semiconductor technology, such as SiC, which promises such benefits as higher current densities, higher voltage blocking capabilities, and operation at temperatures vastly exceeding silicon. In order to fully take advantage of these benefits, it is paramount that the entire system is designed to handle these elevated conditions. This discussion presents the results of a 600V 180 A fully functional single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. Specifically, the high-temperature packaging of these systems are discussed in detail, including: power and driver substrates, base plate materials, transient liquid phase (TLP) die attach, wire bonds, passivation, and housing materials. The thermal performance of the system under power is also addressed, with key focus on reducing the thermal resistance of each layer. Finally, the high-temperature electrical test results of the prototype systems fabricated are presented, followed by plans for future work.
Jared Hornberger, Electronics Packaging Manager
Arkansas Power Electronics International, Inc.
Fayetteville, AR

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