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Encapsulation of Power Modules for Extreme Environment Electronics
Keywords: Encapsulation, SiC, Extreme Environments
It has been demonstrated that wideband gap devices fabricated from SiC, or GaN grown on SiC, can operate over a much wider temperature range than traditional silicon or GaAs devices. However, most of the packaging technology in use to today was developed for silicon or GaAs devices and much of this technology is fundamentally limited in its temperature range. For example encapsulation and housing materials often have maximum service temperatures of 200 oC. Therefore, new technologies are needed to enable the wide spread use of these new devices at elevated temperatures. In particular, the identification or development of suitable gels and housing materials for power electronic modules operating at high temperature is a critical issue. These power modules can operate with very high internal voltages, and gels and polymeric housings have traditionally been used to prevent arcing within the packages. This paper seeks to address this fundamental problem by providing long term reliability data on a number of encapsulation gels and housing materials that are suitable for operation of these devices in excess of 200 oC. Baseline electric breakdown data measured at high temperature will be presented as well as data on aged samples.
Fred Barlow, Associate Professor
University of Idaho
Moscow, ID

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