Here is the abstract you requested from the rf_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Performance and Cost Benefits of Si-Al Substrates in the Manufacture of RF and Microwave III-V Semiconductor Devices|
|Keywords: Al-Si, submount, wafer level|
|As the power density and size of III-V devices and wafers increase, so have the requirements for expansion-matched substrates to enable cost effective, reliable and robust fabrication. Using the proprietary Spray Forming technology, Sandvik Osprey has developed a unique family of Si-Al alloys (Controlled Expansion Alloys),that are used in a wide range of applications including micro-electronic packaging. By varying the ratio of silicon and aluminum the thermal expansion coefficient can be adjusted to any value between 5 and 17ppm/oC. One of the alloys, CE6 with a nominal Si content of 80%, balance Al, offers thermal expansion characteristics that have been shown to be very closely matched to both sapphire and GaAs, minimizing stress and distortion during the device fabrication process, with improved thermal performance. CE6 has a thermal conductivity of 110 W/mK and mechanical properties superior to silicon, germanium and alumina. The alloy can be processed into wafers, up to 12” diameter, using existing silicon-based, wafer processing technology, making them a cost effective alternative to most commonly used materials. This paper will include a review of device fabrication methodologies and candidate substrate properties.|
|Andrew J. W. Ogilvy,
Sandvik Osprey Ltd.
Neath SA1 1NJ,