Here is the abstract you requested from the rf_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Packaging Technology Development for Silicon on Sapphire based Commercial RF IC Products|
|Keywords: Ultra-Thin-Silicon , CMOS, RF IC|
|Peregrine’s Ultra CMOS™ technology which is the industry’s first and only commercial qualified use of Ultra-Thin-Silicon (UTSi®) on sapphire substrate enables the combination of high-performance RF, mixed-signal, passive elements, nonvolatile memory and digital function on a single device. This SOS or silicone on sapphire monolithic integration provides significant performance advantages over competing mixed-signal process such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in application where RF performance, low power and integration are paramount. Based on this SOS technology Peregrine has developed product series for wireless infrastructure and mobile wireless, broadband communications, space, defense and avionics markets This presentation introduced the critical wafer backend process developed in Peregrine for sapphire based wafer material and packaging solution for commercial RF IC products for which traditional plastic packages as MSOP, TSSOP, QFN and recently developed ultra thin package are presented. Package mechanical performance, reliability evaluation, electrical performance will be addressed.|
|John Yang, Senior Packaging Engineer
San Diego, CA