Abstract Preview

Here is the abstract you requested from the rf_2009 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Wide Band Gap RF/Microwave Power Transistors Require Package Updates
Keywords: RF/Microwave Power, Wide Band Gap, Package Updates
Wide Band Gap Semiconductors are driving Next Generation RF / Microwave Packaging for High Power and Wide Bandwidth on Radar, Defense Communications and EW applications. The existing packages which were designed for Silicon and Gallium Arsenide are not adequate to support the capabilities of increased power and broader bandwidth. The Wide Band Gap semiconductor chips based on Silicon Carbide and Gallium Nitride are now available and the package suppliers have the opportunity to step forward to support the new designs which are in development. Transistor suppliers are looking to work closely with the package suppliers to support this requirement. The paper identifies several of the driving factors and changes needed.
Mike Mallinger, Director of Business Development WBG Products
Microsemi Corp RFIS
Santa Clara, CA

  • Amkor
  • ASE
  • Canon
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Plexus
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Specialty Coating Systems